| PART |
Description |
Maker |
| RA20H8087M-E01 RA20H8087M-01 RA20H8087M |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO 806-825 / 851 - 870MHz 202.5V阶段制造。对于移动通信
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RA03M8087M10 |
806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
Mitsubishi Electric Semiconductor
|
| M68745L 68745L |
From old datasheet system
SILICON MOS FET POWER AMPLIFIER / 806-870MHz / 3.8W / FM PORTABLE RADIO
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2MP04-018-15 2MP04-018-10 2MP04-018-12 2MP04018 |
Specifications
The series of two-stage TE modules has been designed for applications where a relatively large cold side is required as well as two-stage level cooling.
|
RMT Ltd.
|
| 2MP04-060-10 2MP04-060-12 2MP04-060-15 2MP04060 |
Specifications
The series of two-stage TE modules has been designed for applications where a relatively large cold side is required as well as two-stage level cooling.
|
RMT Ltd.
|
| 2MP04-096 2MP04-096-15 2MP04-096-10 2MP04-096-12 2 |
Specifications
The series of two-stage TE modules has been designed for applications where a relatively large cold side is required as well as two-stage level cooling.
|
RMT Ltd.
|
| MPS-080817N-85 |
806 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
MicroWave Technology, Inc.
|
| 6DPH-815D860-12 |
806 MHz - 825 MHz ANTENNA SUPPORT CIRCUIT
|
TOKO, Inc.
|
| HCF4521 HCF4521B HCF4521BEY HCF4521BM1 HCF4521BM01 |
Octal Buffers/Drivers With 3-State Outputs 20-CFP -55 to 125
24 STAGE FREQUENCY DIVIDER
24-STAGE FREQUENCY DIVIDER
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
